Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. - Tian-Li Wu; Denis Marcon; Brice De Jaeger; Marleen Van Hove; Benoit Bakeroot; Steve Stoffels; Guido Groeseneken; Stefaan Decoutere; Robin Roelofs (IRPS, 2015)