A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride-oxide dielectrics. - Fen Chen; Rolf-Peter Vollertsen; Baozhen Li; Dave Harmon; Wing L. Lai (Microelectron. Reliab., 2002)

Thin dielectric reliability assessment for DRAM technology with deep trench storage node. - Rolf-Peter Vollertsen (Microelectron. Reliab., 2003)

An introduction to fast wafer level reliability monitoring for integrated circuit mass production. - Andreas Martin 002; Rolf-Peter Vollertsen (Microelectron. Reliab., 2004)

Fast wafer level reliability: methods and experiences. - Rolf-Peter Vollertsen (Microelectron. Reliab., 2004)

Voltage acceleration and t63.2 of 1.6-10 nm gate oxides. - Rolf-Peter Vollertsen; Ernest Y. Wu (Microelectron. Reliab., 2004)

Is the power-law model applicable beyond the direct tunneling regime? - Rainer Duschl; Rolf-Peter Vollertsen (Microelectron. Reliab., 2005)

The TDDB power-law model - Physics and experimental evidences. - Rolf-Peter Vollertsen; Enrique Miranda 002 (Microelectron. Reliab., 2005)

A fWLR test structure and method for device reliability monitoring using product relevant circuits. - Rolf-Peter Vollertsen; Georg Georgakos; K. Kölpin; C. Olk (IRPS, 2015)

Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process. - Andreas Martin 002; Rolf-Peter Vollertsen; A. Mitchell; M. Traving; D. Beckmeier; H. Nielen (Microelectron. Reliab., 2016)