Mechanical and thermal reliability of printed organic thin-film transistor. - Xavier Boddaert; B. Bensaid; Patrick Benaben; Romain Gwoziecki; Romain Coppard (Microelectron. Reliab., 2010)

Fully printed organic CMOS technology on plastic substrates for digital and analog applications. - Anis Daami; Cécile Bory; Mohamed Benwadih; Stéphanie Jacob; Romain Gwoziecki; Isabelle Chartier; Romain Coppard; Christophe Serbutoviez; Lidia Maddiona; Enzo Fontana; Antonino Scuderi (ISSCC, 2011)

High performance printed N and P-type OTFTs for complementary circuits on plastic substrate. - Stéphanie Jacob; Mohamed Benwadih; Jacqueline Bablet; Isabelle Chartier; Romain Gwoziecki; Sahel Abdinia; Eugenio Cantatore; Lidia Maddiona; Francesca Tramontana; Giorgio Maiellaro; Luigi Mariucci; Giuseppe Palmisano; et al. (ESSDERC, 2012)

Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications. - Isabelle Chartier; Stéphanie Jacob; Michaël Charbonneau; Abdelkader Aliane; Aurelia Plihon; Romain Coppard; Romain Gwoziecki; Jean-Marie Verilhac; Christophe Serbutoviez; Olivier Dhez; Eugenio Cantatore; Fabrice Domingues Dos Santos (ESSDERC, 2014)

Printed actuators made with electroactive polymers on flexible substrates. - Aurelia Plihon; Vincent Fischer 001; Fabrice Domingues Dos Santos; Romain Gwoziecki (NEMS, 2014)

Enhanced printed temperature sensors on flexible substrate. - Abdelkader Aliane; Vincent Fischer 001; M. Galliari; L. Tournon; Romain Gwoziecki; Christophe Serbutoviez; Isabelle Chartier; Romain Coppard (Microelectron. J., 2014)

Ambient Light Organic Sensor in a Printed Complementary Organic TFT Technology on Flexible Plastic Foil. - Giorgio Maiellaro; Egidio Ragonese; Romain Gwoziecki; Stéphanie Jacobs; Nenad Marjanovic; Marek Chrapa; Jurg Schleuniger; Giuseppe Palmisano (IEEE Trans. Circuits Syst. I Regul. Pap., 2014)

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. - William Vandendaele; Thomas Lorin; Romain Gwoziecki; Yannick Baines; Jérome Biscarrat; Marie-Anne Jaud; Charlotte Gillot; Matthew Charles; Marc Plissonnier; Gilles Reimbold (ESSDERC, 2017)

Study of forward AC stress degradation of GaN-on-Si Schottky diodes. - Thomas Lorin; William Vandendaele; Romain Gwoziecki; Charlotte Gillot; Jérome Biscarrat; Gérard Ghibaudo; Fred Gaillard (Microelectron. Reliab., 2018)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. - Roméo Kom Kammeugne; Charles Leroux; Tadeu Mota Frutuoso; Jacques Cluzel; Laura Vauche; Cyrille Le Royer; Romain Gwoziecki; Xavier Garros; Fred Gaillard; Matthew Charles; Edwige Bano; Gérard Ghibaudo (ESSDERC, 2021)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. - Camille Leurquin; William Vandendaele; Aby-Gaël Viey; Romain Gwoziecki; René Escoffier; R. Salot; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2022)

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. - Camille Leurquin; William Vandendaele; Romain Gwoziecki; B. Mohamad; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2023)

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). - William Vandendaele; Camille Leurquin; R. Lavieville; Marie-Anne Jaud; Abygaël Viey; Romain Gwoziecki; B. Mohamad; Etienne Nowak; Aurore Constant; Ferdinando Iucolano (IRPS, 2023)