Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact. - Romain Laffont; J. Razafindramora; Pierre Canet; Rachid Bouchakour; Jean-Michel Mirabel (MTDT, 2002)

MM11 based flash memory cell model including characterization procedure. - B. Saillet; Arnaud Régnier; Jean-Michel Portal; B. Delsuc; Romain Laffont; Pascal Masson; Rachid Bouchakour (ISCAS, 2006)

A new method to quantify retention-failed cells of an EEPROM CAST. - Claire Le Roux; Laurent Lopez; Abdellatif Firiti; Jean-Luc Ogier; Frédéric Lalande; Romain Laffont; Gilles Micolau (Microelectron. Reliab., 2007)

A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories. - M. Roca; Romain Laffont; Gilles Micolau; Frédéric Lalande; O. Pizzuto (Microelectron. Reliab., 2009)

Leakage paths identification in NVM using biased data retention. - Jérémy Postel-Pellerin; Romain Laffont; Gilles Micolau; Frédéric Lalande; Arnaud Régnier; Bernard Bouteille (Microelectron. Reliab., 2010)

PSP based DCG-FGT transistor model including characterization procedure. - Abderrezak Marzaki; V. Bidal; Romain Laffont; Wenceslas Rahajandraibe; Jean-Michel Portal; Rachid Bouchakour (ICECS, 2011)

PSP based DCG-FGT transistor Model: Full characterization procedure. - Abderrezak Marzaki; V. Bidal; Romain Laffont; Wenceslas Rahajandraibe; Jean-Michel Portal; Rachid Bouchakour (ISCIT, 2012)

A new adustable Schmitt Trigger based on Dual Control Gate-Floating Gate Transistor (DCG-FGT). - Abderrezak Marzaki; V. Bidal; Romain Laffont; Wenceslas Rahajandraibe; Jean-Michel Portal; Rachid Bouchakour (MWSCAS, 2012)

Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols. - Philippe Chiquet; Pascal Masson; Romain Laffont; Gilles Micolau; Jérémy Postel-Pellerin; Frédéric Lalande; Bernard Bouteille; Jean-Luc Ogier (Microelectron. Reliab., 2012)

Effect of ions presence in the SiOCH inter metal dielectric structure. - Benjamin Rebuffat; Vincenzo Della Marca; Pascal Masson; Jean-Luc Ogier; Marc Mantelli; Olivier Paulet; Laurent Lopez; Romain Laffont (ESSDERC, 2013)

DCG-FGT transistor: Retention study of Floating Gate charge. - Abderrezak Marzaki; V. Bidal; Romain Laffont; Wenceslas Rahajandraibe; Jean-Michel Portal; Rachid Bouchakour (MWSCAS, 2013)

Effect of AC stress on oxide TDDB and trapped charge in interface states. - Benjamin Rebuffat; Pascal Masson; Jean-Luc Ogier; Marc Mantelli; Romain Laffont (ISIC, 2014)