Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. - Shanmuganathan Palanisamy; Josef Lutz; Roman Boldyrjew-Mast; Thomas Basler (IRPS, 2020)

Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs. - Roman Boldyrjew-Mast; Clemens Herrmann; Xing Liu; Xupeng Li; Thomas Basler (IRPS, 2025)