Configurable Multi-Port Dynamic Bitcell with Internal Refresh Mechanism. - Roman Golman; Robert Giterman; Adam Teman (ICECS, 2018)

Live Demonstration: An 800 Mhz Gain-Cell Embedded DRAM in 28 nm CMOS Bulk Process for Approximate Computing Applications. - Robert Giterman; Roman Golman; Amir Shalom; Or Maltabashi; Alexander Fish; Adam Teman (ISCAS, 2018)

Improving Energy-Efficiency in Dynamic Memories Through Retention Failure Detection. - Robert Giterman; Roman Golman; Adam Teman (IEEE Access, 2019)

Improved Read Access in GC-eDRAM Memory by Dual-Negative Word-Line Technique. - Roman Golman; Robert Giterman; Odem Harel; Adam Teman (ISCAS, 2020)

Gain-Cell Embedded DRAMs: Modeling and Design Space. - Andrea Bonetti; Roman Golman; Robert Giterman; Adam Teman; Andreas Burg 001 (IEEE Trans. Very Large Scale Integr. Syst., 2020)

4T Gain-Cell Providing Unlimited Availability through Hidden Refresh with 1W1R Functionality. - Einat Levy; Aharon Sfez; Roman Golman; Odem Harel; Adam Teman (ISCAS, 2021)

Refresh Algorithm for Ensuring 100% Memory Availability in Gain-Cell Embedded DRAM Macros. - Roman Golman; Netanel Nachum; Tomer Cohen; Robert Giterman; Adam Teman (IEEE Access, 2021)

Hamming Distance Tolerant Content-Addressable Memory (HD-CAM) for Approximate Matching Applications. - Esteban Garzón; Roman Golman; Zuher Jahshan; Robert Hanhan; Natan Vinshtok-Melnik; Marco Lanuzza; Adam Teman; Leonid Yavits (CoRR, 2021)

A RISC-V-based Research Platform for Rapid Design Cycle. - Esteban Garzón; Roman Golman; Odem Harel; Tzachi Noy; Yehuda Kra; Asaf Pollock; Slava Yuzhaninov; Yonatan Shoshan; Yehuda Rudin; Yoav Weizman; Marco Lanuzza; Adam Teman (ISCAS, 2022)

Hamming Distance Tolerant Content-Addressable Memory (HD-CAM) for DNA Classification. - Esteban Garzón; Roman Golman; Zuher Jahshan; Robert Hanhan; Natan Vinshtok-Melnik; Marco Lanuzza; Adam Teman; Leonid Yavits (IEEE Access, 2022)

A Low-Complexity Sensing Scheme for Approximate Matching Content-Addressable Memory. - Esteban Garzón; Roman Golman; Marco Lanuzza; Adam Teman; Leonid Yavits (IEEE Trans. Circuits Syst. II Express Briefs, 2023)

A 4T GC-eDRAM Bitcell with Differential Readout Mechanism For High Performance Applications. - Roman Golman; Avinoam Segev; Adam Teman (PRIME, 2024)

A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance. - Esteban Garzón; Eyal Rechef; Roman Golman; Odem Harel; Yuval Harary; Paz Snapir; Marco Lanuzza; Adam Teman; Leonid Yavits (IEEE J. Solid State Circuits, 2025)