Thermal modeling of single event burnout failure in semiconductor power devices. - D. Greg Walker; T. S. Fisher; J. Liu; Ronald D. Schrimpf (Microelectron. Reliab., 2001)

A generalized model for the lifetime of microelectronic components, applied to storage conditions. - Loren J. Wise; Ronald D. Schrimpf; Harold G. Parks; Kenneth F. Galloway (Microelectron. Reliab., 2001)

Single event transient effects in a voltage reference. - P. C. Adell; Ronald D. Schrimpf; C. R. Cirba; W. T. Holman; X. Zhu; Hugh J. Barnaby; O. Mion (Microelectron. Reliab., 2005)

Single event burnout in power diodes: Mechanisms and models. - A. M. Albadri; Ronald D. Schrimpf; Kenneth F. Galloway; D. Greg Walker (Microelectron. Reliab., 2006)

Effects of device aging on microelectronics radiation response and reliability. - Daniel M. Fleetwood; M. P. Rodgers; L. Tsetseris; X. J. Zhou; I. Batyrev; S. Wang; Ronald D. Schrimpf; Sokrates T. Pantelides (Microelectron. Reliab., 2007)

Hydrogen in MOSFETs - A primary agent of reliability issues. - Sokrates T. Pantelides; L. Tsetseris; Sergey N. Rashkeev; X. J. Zhou; Daniel M. Fleetwood; Ronald D. Schrimpf (Microelectron. Reliab., 2007)

Total ionizing dose effects in shallow trench isolation oxides. - Federico Faccio; Hugh J. Barnaby; Xiao J. Chen; Daniel M. Fleetwood; Laura Gonella; Michael L. McLain; Ronald D. Schrimpf (Microelectron. Reliab., 2008)

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. - Sokrates T. Pantelides; L. Tsetseris; M. J. Beck; Sergey N. Rashkeev; G. Hadjisavvas; I. G. Batyrev; B. R. Tuttle; A. G. Marinopoulos; X. J. Zhou; Daniel M. Fleetwood; Ronald D. Schrimpf (ESSCIRC, 2009)

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. - R. Arinero; En-xia Zhang; Nadia Rezzak; Ronald D. Schrimpf; Daniel M. Fleetwood; B. K. Choï; A. B. Hmelo; Julien Mekki; Antoine D. Touboul; Frédéric Saigné (Microelectron. Reliab., 2011)

The sensitivity of radiation-induced leakage to STI topology and sidewall doping. - Nadia Rezzak; Michael L. Alles; Ronald D. Schrimpf; Sarah Kalemeris; Lloyd W. Massengill; John Sochacki; Hugh J. Barnaby (Microelectron. Reliab., 2011)

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. - Tania Roy; Yevgeniy S. Puzyrev; En-xia Zhang; Sandeepan DasGupta; Sarah A. Francis; Daniel M. Fleetwood; Ronald D. Schrimpf; Umesh K. Mishra; Jim S. Speck; Sokrates T. Pantelides (Microelectron. Reliab., 2011)

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. - Nadia Rezzak; Pierre Maillard; Ronald D. Schrimpf; Michael L. Alles; Daniel M. Fleetwood; Yanfeng Albert Li (Microelectron. Reliab., 2012)

An efficient technique to select logic nodes for single event transient pulse-width reduction. - Nihaar N. Mahatme; Indranil Chatterjee; Akash Patki; Daniel B. Limbrick; Bharat L. Bhuva; Ronald D. Schrimpf; William H. Robinson (Microelectron. Reliab., 2013)

Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs. - Aditya Kalavagunta; Shubhajit Mukherjee; Robert A. Reed; Ronald D. Schrimpf (Microelectron. Reliab., 2014)

Total-ionizing-dose effects and reliability of carbon nanotube FET devices. - Cher Xuan Zhang; En-xia Zhang; Daniel M. Fleetwood; Michael L. Alles; Ronald D. Schrimpf; Chris Rutherglen; Kosmas Galatsis (Microelectron. Reliab., 2014)

Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs. - Balaji Narasimham; Jung K. Wang; Narayana Vedula; Saket Gupta; Brandon Bartz; Carl Monzel; Indranil Chatterjee; Bharat L. Bhuva; Ronald D. Schrimpf; Robert A. Reed (IRPS, 2015)

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. - A. Sasikumar; Z. Zhang; P. Kumar; En-xia Zhang; Daniel M. Fleetwood; Ronald D. Schrimpf; Paul Saunier; Cathy Lee; S. A. Ringel; Aaron R. Arehart (IRPS, 2015)

A TCAD evaluation of a single Bulk-BICS with integrative memory cell. - Alexandre Simionovski; Gilson I. Wirth; Ronald D. Schrimpf; Bharat L. Bhuva (Microelectron. J., 2018)

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. - Peng Wang; En-xia Zhang; Daniel M. Fleetwood; Peng Fei Wang; Michael W. McCurdy; Ji-Tzouh Lin; Michael L. Alles; Jim L. Davidson; Bruce W. Alphenaar; Ronald D. Schrimpf (ASICON, 2021)

Single-Event Burnout by Cf-252 Irradiation in Vertical $ beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. - Sajal Islam; Aditha S. Senarath; Arijit Sengupta; En-xia Zhang; Dennis R. Ball; Daniel M. Fleetwood; Ronald D. Schrimpf; Esmat Farzana; Arkka Bhattacharyya; Nolan S. Hendricks; James S. Speck (DRC, 2023)

Charge Trapping in Irradiated 3D Devices and ICs (Invited). - En-xia Zhang; Shintaro Toguchi; Zi Xiang Guo; Michael L. Alles; Ronald D. Schrimpf; Daniel M. Fleetwood (IRPS, 2024)