Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications - Ronald Grundbacher (1997)

A 2.8-W Q-Band High-Efficiency Power Amplifier. - Michael V. Aust; Arvind K. Sharma; Owen Fordham; Ronald Grundbacher; Richard To; Roger S. Tsai; Richard Lai 002 (IEEE J. Solid State Circuits, 2006)

Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. - Yeong-Chang Chou; Denise Leung; Ronald Grundbacher; Richard Lai 002; Quin Kan; P. H. Liu; David Eng; Thomas R. Block; Aaron K. Oki (Microelectron. Reliab., 2006)

MEMSlab: A Practical MEMS Course for the Fabrication, Packaging, and Testing of a Single-Axis Accelerometer. - Ronald Grundbacher; Jochen E. Hoetzel; Christofer Hierold (IEEE Trans. Educ., 2009)