Device and circuit design issues in SOI technology. - Ghavam G. Shahidi; Atul Ajmera; Fariborz Assaderaghi; Ronald J. Bolam; Harold Hovel; Effendi Leobandung; Werner Rausch; Devendra Sadana; Dominic Schepis; Lawrence F. Wagner; Larry Wissel; Kun Wu; et al. (CICC, 1999)

Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations. - Terence B. Hook; Jay S. Burnham; Ronald J. Bolam (IBM J. Res. Dev., 1999)

Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration. - Terence B. Hook; Ronald J. Bolam; William Clark; Jay S. Burnham; Nivo Rovedo; Laura Schutz (Microelectron. Reliab., 2005)

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. - Ernest Y. Wu; Ron Bolam; Baozhen Li; Tian Shen; Barry P. Linder; Griselda Bonilla; Miaomiao Wang 006; Dechao Guo (IRPS, 2022)

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. - Ernest Y. Wu; Brian T. McGowan; Ronald Bolam; Huai Huang; Huimei Zhou; Miaomiao Wang 006 (IRPS, 2024)