Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT. - Sameh G. Khalil; Rongming Chu; Ray Li; Danny Wong; Scott Newell; Xu Chen; M. Chen; D. Zehnder; S. Kim; A. Corrion; Brian Hughes; Karim Boutros; et al. (ESSDERC, 2012)

Recent advances in GaN power electronics. - Karim Boutros; Rongming Chu; Brian Hughes (CICC, 2013)

Characteristics of P-channel GaN MOSFET up to 300 °C. - Sang Woo Han; Jianan Song; Rongming Chu (DRC, 2019)

Impact of P-GaN ohmic Contact Resistivity on Switching Time of GaN Super-Heterojunction FETs. - Yuxin Du; Jesse T. Kemmerling; Jianan Song; Keisuke Shinohara; Vivek Mehrotra; Rongming Chu (DRC, 2024)

2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching. - Mansura Sadek; Jesse T. Kemmerling; Ajay Kumar Visvkarma; Rian Guan; Yixin Xiong; Jianan Song; James Spencer Lundh; Karl D. Hobart; Travis J. Anderson; Rongming Chu (DRC, 2024)