Comprehensive analysis of gate voltage and temperature stresses induced threshold voltage instability for 1200V DT SiC MOSFET through experiment and simulation. - Tao Liu; Hui Li; Rongyao Ma; Zhiyu Wang; Qian Liu; Hao Wu; Jian Shen; Juan Luo; Hao Zhong; Shengdong Hu (Microelectron. J., 2025)