Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology. - Yiqin Zeng; Zhetao Ding; Xueyang Li; Minglei Ma; Yue Peng; Rongzong Shen; Gaobo Lin; Chengji Jin; Xiao Yu; Bing Chen; Ran Cheng; Genquan Han (ESSDERC, 2023)

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications. - Xinze Li; Yiqin Zeng; Yuxuan Wu; Ying Sun; Junru Qu; Chengji Jin; Jiani Gu; Rongzong Shen; Gaobo Lin; Dawei Gao; Xiao Yu; Bing Chen; et al. (IRPS, 2024)

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET. - Junru Qu; Dong Liu; Bing Chen; Ying Sun; Xinze Li; Chengji Jin; Jiajia Chen; Haoji Qian; Rongzong Shen; Xiao Yu; Dawei Gao; Ran Cheng; et al. (IRPS, 2024)

An AND-type 1T-FeFET array with robust write and read operations. - Jiacheng Xu; Jiayi Zhao; Hongrui Zhang; Haoji Qian; Jiani Gu; Bowen Chen; Gaobo Lin; Rongzong Shen; Xinda Song; Huan Liu; Yian Ding; Minglei Ma; et al. (Sci. China Inf. Sci., 2025)