High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. - Roohollah Yarmand; Behzad Ebrahimi; Hassan Afzali-Kusha; Ali Afzali-Kusha; Massoud Pedram (ISQED, 2015)

Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs. - Kolsoom Mehrabi; Behzad Ebrahimi; Roohollah Yarmand; Ali Afzali-Kusha; Hamid Mahmoodi (Microelectron. Reliab., 2016)

DART: A Framework for Determining Approximation Levels in an Approximable Memory Hierarchy. - Roohollah Yarmand; Mehdi Kamal; Ali Afzali-Kusha; Massoud Pedram (IEEE Trans. Very Large Scale Integr. Syst., 2020)

OPTIMA: An Approach for Online Management of Cache Approximation Levels in Approximate Processing Systems. - Roohollah Yarmand; Mehdi Kamal; Ali Afzali-Kusha; Pooria Esmaeli; Massoud Pedram (IEEE Trans. Very Large Scale Integr. Syst., 2021)