Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. - François Andrieu; Mikaël Cassé; E. Baylac; P. Perreau; O. Nier; Denis Rideau; R. Berthelon; Franck Pourchon; A. Pofelski; Barbara De Salvo; C. Gallon; Vincent Mazzocchi; et al. (ESSDERC, 2014)

28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. - Rossella Ranica; Nicolas Planes; Vincent Huard; Olivier Weber; Daniel Noblet; Damien Croain; Fabien Giner; Sylvie Naudet; P. Mergault; S. Ibars; A. Villaret; Maryline Parra; et al. (VLSI Circuits, 2016)

28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. - Franck Arnaud; Sébastien Haendler; Sylvain Clerc; Rossella Ranica; Anna Gandolfo; Olivier Weber (ESSDERC, 2019)

Improving Ge-rich GST ePCM reliability through BEOL engineering. - Andrea Redaelli; Anna Gandolfo; Giulia Samanni; Enrico Gomiero; Elisa Petroni; Luca Scotti; Andrea Lippiello; Paolo Mattavelli; J. Jasse; D. Codegoni; A. Serafini; Rossella Ranica; et al. (ESSDERC, 2021)

ASIL-D automotive-grade microcontroller in 28nm FD-SOI with full-OTA capable 21MB embedded PCM memory and highly scalable power management. - Nicolas Grossier; Fabio Disegni; A. Ventre; Antonio Barcella; R. Mariani; V. Marino; S. Mazzara; A. Scavuzzo; M. Bansal; B. Soni; A. Anand; S. Banzal; et al. (VLSI Technology and Circuits, 2023)

Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration. - R. Berthelon; Olivier Weber; F. Ibars; B. Revel; C. Borowiak; J. C. Grenier; B. Dumont; S. Desmoulins; P. O. Sassoulas; P. Ferreira; S. Chouteau; S. Niel; et al. (VLSI Technology and Circuits, 2024)