Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance. - Ruben Alcala; Furqan Mehmood; Pramoda Vishnumurthy; Terence Mittmann; Thomas Mikolajick; Uwe Schroeder (IMW, 2022)

Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). - Pramoda Vishnumurthy; Ruben Alcala; Thomas Mikolajick; Uwe Schroeder; Luis Azevedo Antunes; Alfred Kersch (IRPS, 2024)

HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. - Yusuke Shuto; Jun Okuno; Tsubasa Yonai; Ryo Ono; Peter Reinig; Maximilian Lederer; Konrad Seidel; Ruben Alcala; Thomas Mikolajick; Uwe Schroeder; Taku Umebayashi; Kentaro Akiyama (VLSI Technology and Circuits, 2024)

Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current. - Mor M. Dahan; Emanuel Ber; Florian Wunderwald; Gilad Zilberman; Guy Orlev; Yair Keller; Einav Raveh; Ruben Alcala; Thomas Mikolajick; Uwe Schroeder; Eilam Yalon (IMW, 2025)