Industrial application of heterostructure device simulation. - Vassil Palankovski; Rüdiger Quay; Siegfried Selberherr (IEEE J. Solid State Circuits, 2001)

A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE. - Alexandre Bessemoulin; Rüdiger Quay; Suitbert Ramberger; Hermann Massler; Michael Schlechtweg (IEEE J. Solid State Circuits, 2003)

Reliability of 70 nm metamorphic HEMTs. - Maximilian Dammann; Arnulf Leuther; Rüdiger Quay; M. Meng; Helmer Konstanzer; W. Jantz; Michael Mikulla (Microelectron. Reliab., 2004)

InP DHBT Based IC Technology for over 80 Gbit/s Data Communications. - Rachid Driad; Robert E. Makon; Karl Schneider; Ulrich Nowotny; Rolf Aidam; Rüdiger Quay; Michael Schlechtweg; Michael Mikulla; Günter Weimann (IEICE Trans. Electron., 2006)

InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s. - Robert E. Makon; Rachid Driad; Karl Schneider; Manfred Ludwig; Rolf Aidam; Rüdiger Quay; Michael Schlechtweg; Günter Weimann (IEEE J. Solid State Circuits, 2006)

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. - Maximilian Dammann; W. Pletschen; Patrick Waltereit; Wolfgang Bronner; Rüdiger Quay; Stefan Müller; Michael Mikulla; Oliver Ambacher; P. J. van der Wel; S. Murad; T. Rödle; R. Behtash; et al. (Microelectron. Reliab., 2009)

Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. - Stephan Maroldt; Dirk Wiegner; Stanislav Vitanov; Vassil Palankovski; Rüdiger Quay; Oliver Ambacher (IEICE Trans. Electron., 2010)

Multiband Doherty RF power amplifier. - Patrick Jueschke; Dirk Wiegner; Gerhard Luz; R. Machinal; Andreas Pascht; Rüdiger Quay (AFRICON, 2011)

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. - M. Cäsar; Maximilian Dammann; Vladimir Polyakov; Patrick Waltereit; Rüdiger Quay; Michael Mikulla; Oliver Ambacher (Microelectron. Reliab., 2011)

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. - Matthias Wespel; Martina Baeumler; Vladimir Polyakov; Maximilian Dammann; Richard Reiner; Patrick Waltereit; Rüdiger Quay; Michael Mikulla; Oliver Ambacher (Microelectron. Reliab., 2014)

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. - Matthias Wespel; Maximilian Dammann; Vladimir Polyakov; Richard Reiner; Patrick Waltereit; B. Weiss; Rüdiger Quay; Michael Mikulla; Oliver Ambacher (IRPS, 2015)

A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC. - Saqib Kaleem; Jutta Kuhn; Rüdiger Quay; Matthias Hein 002 (RWS, 2015)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)

Performance of tri-gate AlGaN/GaN HEMTs. - Mohamed Alsharef; Ralf Granzner; Frank Schwierz; Erdin Ture; Rüdiger Quay; Oliver Ambacher (ESSDERC, 2016)

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. - Maximilian Dammann; Martina Baeumler; Vladimir Polyakov; Peter Brückner; Helmer Konstanzer; Rüdiger Quay; Michael Mikulla; Andreas Graff; Michél Simon-Najasek (Microelectron. Reliab., 2017)

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Tobias Kemmer; Helmer Konstanzer; Andreas Graff; Michél Simon-Najasek; Rüdiger Quay (Microelectron. Reliab., 2018)

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. - Tobias Kemmer; Michael Dammann; Martina Baeumler; Vladimir Polyakov; Peter Brückner; Helmer Konstanzer; Rüdiger Quay; Oliver Ambacher (IRPS, 2020)

Building Blocks for GaN Power Integration. - Michael Basler; Richard Reiner; Stefan Moench; Fouad Benkhelifa; Philipp Döring; Patrick Waltereit; Rüdiger Quay; Oliver Ambacher (IEEE Access, 2021)

Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. - Cristina Maurette-Blasini; Rainer Weber; Sandrine Wagner; Dirk Schwantuschke; Sébastien Chartier; Rüdiger Quay (BCICTS, 2023)

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $ mathrm{f}_{ mathrm{t}}=10.2$ GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Sebastian Krause; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2023)

X-Band 100-W High-Voltage GaN Internally Matched FET with Low Gain Compression. - Sebastian Krause; Rüdiger Quay (IGARSS, 2023)

Three-Phase Motor Inverter and Current Sensing GaN Power IC. - Stefan Moench; Richard Reiner; Michael Basler; Daniel Grieshaber; Fouad Benkhelifa; Patrick Waltereit; Rüdiger Quay (Sensors, 2023)

ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies. - Cristina Maurette-Blasini; Dirk Schwantuschke; Sayed Ali Albahrani; Peter Brückner; Konstantin Kuliabin; Sébastien Chartier; Rüdiger Quay (BCICTS, 2024)

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2024)

32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul. - Bharath Cimbili; Mingquan Bao; Christian Friesicke; Rüdiger Quay (ISSCC, 2024)