Comparison of single-event upset generated by heavy ion and pulsed laser. - Bin Liang; Ruiqiang Song; Jianwei Han; Yaqing Chi; Rui Chen 038; Chunmei Hu; Jianjun Chen; Yingqi Ma; Shipeng Shangguan (Sci. China Inf. Sci., 2017)

Study on the single-event upset sensitivity of 65-nm CMOS sequential logic circuit. - Sai Li; Jianwei Han; Rui Chen 038; Shipeng Shangguan; Yingqi Ma; Xuan Wang (IEICE Electron. Express, 2020)

Single event effect mechanism study in 130nm fully depleted SOI technology devices. - Rui Chen 038; Ziyu Wang; Sai Li; Jianwei Han; Yanan Liang; Qian Chen; Shipeng Shangguan; Runjie Yuan (IEICE Electron. Express, 2024)

Investigating the Electric Field Influence on Total Ionization Dose Effects in Space Radiation for Carbon Nanotube Field Effect Transistors. - Yanan Liang; Qian Chen; Rui Chen 038; Runjie Yuan; Ziyu Wang; Hailong Yu; Jianwei Han (IEEE Access, 2025)

Study on single event burnout mechanism on the "step current" of SiC schottky diodes. - Yanan Liang; Ziyu Wang; Rui Chen 038; Jianwei Han; Bing Liu; Qian Chen; Shipeng Shangguan (IEICE Electron. Express, 2026)