An assessment of RTN-induced threshold voltage jitter. - Jianfu Zhang 001; Azrif Manut; Rui Gao 003; Mehzabeen Mehedi; Zhigang Ji; Weidong Zhang 002; John S. Marsland (ASICON, 2019)

A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. - Rui Gao 003; Mehzabeen Mehedi; Haibao Chen; Xinsheng Wang; Jianfu Zhang 001; Xiaoling Lin; Zhiyuan He; Yiqiang Chen 002; Dengyun Lei; Yun Huang; Yunfei En; Zhigang Ji; et al. (IRPS, 2020)

"Shift and Match" (S...M) method for channel mobility correction in degraded MOSFETs. - Linglin Jing; Rui Gao 003; Zhigang Ji; Runsheng Wang (IRPS, 2020)

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET. - Chao Peng; Zhifeng Lei; Rui Gao 003; Zhangang Zhang; Yiqiang Chen 002; Yunfei En; Yun Huang (IEEE Access, 2020)

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs. - Chao Peng; Rui Gao 003; Zhifeng Lei; Zhangang Zhang; Yiqiang Chen 002; Yunfei En; Yun Huang (IEEE Access, 2021)

A Pragmatic Model to Predict Future Device Aging. - James Brown; Kean Hong Tok; Rui Gao 003; Zhigang Ji; Weidong Zhang 002; John S. Marsland; Thomas Chiarella; Jacopo Franco; Ben Kaczer; Dimitri Linten; Jianfu Zhang 001 (IEEE Access, 2023)