PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding. - Xiaoyu Tang; J. Lu; Rui Zhang 024; Yi Zhao; Wangran Wu; Chang Liu; Yi Shi; Ziqian Huang; Yuechan Kong (IRPS, 2015)

Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs. - Wangran Wu; J. Lu; Chang Liu; Heng Wu; Xiaoyu Tang; Jiabao Sun; Rui Zhang 024; Wenjie Yu; Xi Wang; Yi Zhao (Microelectron. Reliab., 2016)

NiGe metal source/drain Ge pMOSFETs for future high performance VLSI circuits applications. - Rui Zhang 024; Jinghui Han; Junkang Li; Xiaoyu Tang; Yi Zhao (ASICON, 2017)

Ge CMOS technology with advanced interface and junction engineering. - Yi Zhao; Zejie Zheng; Junkang Li; Dong Ni 002; Rui Zhang 024 (ICICDT, 2018)