Optimal design of short circuit robustness for high voltage and high power IGBTs. - Rui Jin; Niannian Ge; Ruifen Nie; Baohua Tian; Feng He; Xiamin Hao (ASICON, 2023)

Effect of polarized AlGaN/GaN structure-based field plate on the electric properties of a 4H-SiC Schottky barrier diode. - Feng He; Wenting Zhang; Xiamin Hao; Xinyu Li; Ruifen Nie; Rui Jin (Microelectron. J., 2025)