A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices. - Jianguo Yang; Ruijun Lin; Keji Zhou; Yuejun Zhang; Xiaoyong Xue; Hangbing Lv (Microelectron. J., 2022)

A 2D2R ReRAM CIM accelerator for multilayer perceptron in visual classification applications. - Keji Zhou; Ruijun Lin; Zhiwang Guo; Yixuan Liu; Jingwen Jiang; Chenyang Zhao; Jinbei Fang; Xiaoxin Xu; Xiaoyong Xue; Xiaoyang Zeng (Microelectron. J., 2022)

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance. - Xunming Zhang; Long Liu; Di Wang 042; Ruijun Lin; Heyong Yang; Xiaoxin Xu; Jianguo Yang; Guozhong Xing; Xiaoyong Xue; Xiaoyang Zeng (IEEE Trans. Circuits Syst. II Express Briefs, 2023)