Ruizhe Zhang

According to our database, Ruizhe Zhang authored at least 7 papers between 2019 and 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery.

Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses.

Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events.

Qihao Song, Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage.

Joseph P. Kozak, Qihao Song, Ruizhe Zhang, Jingcun Liu, Yuhao Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Surge Energy Robustness of GaN Gate Injection Transistors.

Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Ming Xiao, Yuhao Zhang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching.

Joseph P. Kozak, Ruizhe Zhang, Jingcun Liu, Khai D. T. Ngo, Yuhao Zhang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching.

Ming Xiao, Ruizhe Zhang, Garrett Schlenvogt, Thomas Jokinen, Han Wang, Yuhao Zhang

Proceedings of the Device Research Conference, 2019