Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching. - Ming Xiao; Ruizhe Zhang 003; Garrett Schlenvogt; Thomas Jokinen; Han Wang; Yuhao Zhang (DRC, 2019)

Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching. - Joseph P. Kozak; Ruizhe Zhang 003; Jingcun Liu; Khai D. T. Ngo; Yuhao Zhang (IRPS, 2020)

Surge Energy Robustness of GaN Gate Injection Transistors. - Ruizhe Zhang 003; Joseph P. Kozak; Jingcun Liu; Ming Xiao; Yuhao Zhang (IRPS, 2020)

Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage. - Joseph P. Kozak; Qihao Song; Ruizhe Zhang 003; Jingcun Liu; Yuhao Zhang (IRPS, 2021)

Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events. - Qihao Song; Ruizhe Zhang 003; Joseph P. Kozak; Jingcun Liu; Qiang Li; Yuhao Zhang (IRPS, 2021)

Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses. - Joseph P. Kozak; Qihao Song; Jingcun Liu; Ruizhe Zhang 003; Qiang Li; Wataru Saito; Yuhao Zhang (IRPS, 2022)

GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery. - Qihao Song; Joseph P. Kozak; Yunwei Ma; Jingcun Liu; Ruizhe Zhang 003; Roman Volkov; Daniel Sherman; Kurt V. Smith; Wataru Saito; Yuhao Zhang (IRPS, 2022)