Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs. - Jose Angel Ortiz Gonzalez; Ruizhu Wu; Saeed Jahdi; Olayiwola Alatise (IEEE Trans. Ind. Electron., 2020)

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET. - Juefei Yang; Saeed Jahdi; Bernard H. Stark; Ruizhu Wu; Olayiwola Alatise; Jose Angel Ortiz Gonzalez (IECON, 2021)