Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer. - Runhao Han; Jia Yang; Tao Hu; Mingkai Bai; Yajing Ding; Xianzhou Shao; Saifei Dai; Xiaoqing Sun; Junshuai Chai; Hao Xu; Xiaolei Wang; Wenwu Wang 006; et al. (IRPS, 2025)