Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS. - ChoongHyun Lee; Richard G. Southwick; Shogo Mochizuki; Paul Jamison; Ruqiang Bao; Rajan Kumar Pandey; Aniruddha Konar; Takashi Ando; Vijay Narayanan; Bala Haran; Hemanth Jagannathan (ASICON, 2017)

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. - Huimei Zhou; Miaomiao Wang 006; Jingyun Zhang; Koji Watanabe; Curtis Durfee; Shogo Mochizuki; Ruqiang Bao; Richard G. Southwick; Maruf Bhuiyan; Basker Veeraraghavan (IRPS, 2020)

TDDB Reliability in Gate-All-Around Nanosheet. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Tian Shen; Ernest Y. Wu; Richard G. Southwick; Jingyun Zhang; Veeraraghavan S. Basker; Dechao Guo (IRPS, 2021)

SiGe Gate-All-around Nanosheet Reliability. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Curtis Durfee; Liqiao Qin; Jingyun Zhang (IRPS, 2022)