Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. - Satyaki Ganguly; Daniel J. Lichtenwalner; Caleb Isaacson; Donald A. Gajewski; Philipp Steinmann; Ryan Foarde; Brett Hull; Sei-Hyung Ryu; Scott Allen; John W. Palmour (IRPS, 2022)