Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications. - Dan Denninghoff; F. Erdem Arkun; Jeong-Sun Moon; Haidang Tran; Andrea L. Corrion; Georges Siddiqi; David Fanning; Micha Fireman; J. Tai; Joel Wong; Bob Grabar; C. Dao; et al. (BCICTS, 2023)

W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. - F. Erdem Arkun; Dan Denninghoff; Haidang Tran; Ryan Tran; Nicholas C. Miller; Michael Elliott; Ryan Gilbert; Ivan Milosavljevic; Georges Siddiqi; Micha Fireman; Andrea L. Corrion; David Fanning; et al. (DRC, 2023)

90 nm GaN Technology for Millimeter-Wave Power Applications to W-Band and Beyond. - Puneet Srivastava; David F. Brown; Louis Mt. Pleasant; Nicholas C. Miller; Michael Elliott; Ryan Gilbert; John R. Jones; Wenhua Zhu; Hong M. Lu; Douglas M. Dugas; Kanin Chu (DRC, 2023)