A Composite Two-Dimensional Process/Device Simulation System (TOPMODE) and its Application for Total Process Designing in Submicron VLSI MOS Device Phase. - Shinji Onga; Masami Konaka; Akemi Ohmichi; Kohichi Kanaka; Ryo Dang (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1986)

Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model. - Won-Cheol Choi; Hirobumi Kawashima; Ryo Dang (ASP-DAC, 1997)