Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics. - Takamasa Kawanago; Ryo Ikoma; Du Wanjing; Shunri Oda (ESSDERC, 2016)

Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs. - Takamasa Kawanago; Ryo Ikoma; Tomoaki Oba; Hiroyuki Takagi (ESSDERC, 2017)

Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET. - Takamasa Kawanago; Tomoaki Oba; Ryo Ikoma; Hiroyuki Takagi; Shunri Oda (ESSDERC, 2018)