A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors. - Ryoichi Ishihara; Arie Glazer; Yoel Raab; Peter Rusian; Mannie Dorfan; Benzi Lavi; Ilya Leizerson; Albert Kishinevsky; Yvonne Van Andel; Xin Cao; Wim Metselaar; Kees Beenakker; et al. (IEICE Trans. Electron., 2006)

Single-grain Si thin-film transistors for analog and RF circuit applications. - Nitz Saputra; Mina Danesh; Alessandro Baiano; Ryoichi Ishihara; John R. Long; Wim Metselaar; C. I. M. Beenakker; Nobuo Karaki; Y. Hiroshima; Satoshi Inoue (ESSCIRC, 2007)

An Assessment of µ-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration. - Nitz Saputra; Mina Danesh; Alessandro Baiano; Ryoichi Ishihara; John R. Long; Nobuo Karaki; Satoshi Inoue (IEEE J. Solid State Circuits, 2008)

Monolithic 3D integration of SRAM and image sensor using two layers of single grain silicon. - Negin Golshani; Jaber Derakhshandeh; Ryoichi Ishihara; C. I. M. Beenakker; Michael Robertson; Thomas Morrison (3DIC, 2010)

Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits. - Sten Vollebregt; Ryoichi Ishihara; Johan van der Cingel; Kees Beenakker (3DIC, 2011)

Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics. - Ryoichi Ishihara; Jin Zhang; Miki Trifunovic; Jaber Derakhshandeh; Negin Golshani; Daniel M. R. Tajari Mofrad; Tao Chen; Kees Beenakker; Tatsuya Shimoda (IEICE Trans. Electron., 2014)

Design dependent SRAM PUF robustness analysis. - Mafalda Cortez; Said Hamdioui; Ryoichi Ishihara (LATS, 2015)

Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. - Erbing Hua; Heba Abunahla; Georgi Gaydadjiev; Said Hamdioui; Ryoichi Ishihara (DRC, 2024)

Transformer models for quantum gate set tomography. - King Yiu Yu; Aritra Sarkar; Maximilian Rimbach-Russ; Ryoichi Ishihara; Sebastian Feld (Quantum Mach. Intell., 2025)