Word-line architecture for highly reliable 64-Mb DRAM. - Daisaburo Takashima; Yukihito Oowaki; Ryu Ogiwara; Yohji Watanabe; Kenji Tsuchida; Masako Ohta; Hiroaki Nakano; Shigeyoshi Watanabe; Kazunori Ohuchi (IEEE J. Solid State Circuits, 1992)

An experimental DRAM with a NAND-structured cell. - Takehiro Hasegawa; Daisaburo Takashima; Ryu Ogiwara; Masako Ohta; Shinichiro Shiratake; Takeshi Hamamoto; Takashi Yamada; Masami Aoki; Shigeru Ishibashi; Yukihito Oowaki; Shigeyoshi Watanabe; Fujio Masuoka (IEEE J. Solid State Circuits, 1993)

A 0.5-μm, 3-V 1T1C, 1-Mbit FRAM with a variable reference bit-line voltage scheme using a fatigue-free reference capacitor. - Ryu Ogiwara; Sumio Tanaka; Yasuo Itoh; Tadashi Miyakawa; Yoshiaki Takeuchi; Sumiko Mano Doumae; Hiroyuki Takenaka; Iwao Kunishima; Susumu Shuto; Osamu Hidaka; Sumito Ohtsuki; Shin'ichi Tanaka (IEEE J. Solid State Circuits, 2000)

A 76-mm2 8-Mb chain ferroelectric memory. - Daisaburo Takashima; Yoshiaki Takeuchi; Tadashi Miyakawa; Yasuo Itoh; Ryu Ogiwara; Masahiro Kamoshida; Katsuhiko Hoya; Sumiko Mano Doumae; Tohru Ozaki; Hiroyuki Kanaya; Koji Yamakawa; Iwao Kunishima; et al. (IEEE J. Solid State Circuits, 2001)

A 32-Mb chain FeRAM with segment/stitch array architecture. - Shinichiro Shiratake; Tadashi Miyakawa; Yoshiaki Takeuchi; Ryu Ogiwara; Masahiro Kamoshida; Katsuhiko Hoya; Kohei Oikawa; Tohru Ozaki; Iwao Kunishima; Koji Yamakawa; Shigeki Sugimoto; Daisaburo Takashima; et al. (IEEE J. Solid State Circuits, 2003)

A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode. - Katsuhiko Hoya; Daisaburo Takashima; Shinichiro Shiratake; Ryu Ogiwara; Tadashi Miyakawa; Hidehiro Shiga; Sumiko M. Doumae; Sumito Ohtsuki; Yoshinori Kumura; Susumu Shuto; Tohru Ozaki; Koji Yamakawa; et al. (ISSCC, 2006)

A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes. - Hidehiro Shiga; Daisaburo Takashima; Shinichiro Shiratake; Katsuhiko Hoya; Tadashi Miyakawa; Ryu Ogiwara; Ryo Fukuda; Ryosuke Takizawa; Kosuke Hatsuda; Fumiyoshi Matsuoka; Yasushi Nagadomi; Daisuke Hashimoto; et al. (ISSCC, 2009)

A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM. - Daisaburo Takashima; Hidehiro Shiga; Daisuke Hashimoto; Tadashi Miyakawa; Shinichiro Shiratake; Katsuhiko Hoya; Ryu Ogiwara; Ryosuke Takizawa; Ryosuke Doumae; Ryo Fukuda; Yohji Watanabe; Shuso Fujii; et al. (ISSCC, 2010)

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes. - Hidehiro Shiga; Daisaburo Takashima; Shinichiro Shiratake; Katsuhiko Hoya; Tadashi Miyakawa; Ryu Ogiwara; Ryo Fukuda; Ryosuke Takizawa; Kosuke Hatsuda; Fumiyoshi Matsuoka; Yasushi Nagadomi; Daisuke Hashimoto; et al. (IEEE J. Solid State Circuits, 2010)

A 64-Mb Chain FeRAM With Quad BL Architecture and 200 MB/s Burst Mode. - Katsuhiko Hoya; Daisaburo Takashima; Shinichiro Shiratake; Ryu Ogiwara; Tadashi Miyakawa; Hidehiro Shiga; Sumiko M. Doumae; Sumito Ohtsuki; Yoshinori Kumura; Susumu Shuto; Tohru Ozaki; Koji Yamakawa; et al. (IEEE Trans. Very Large Scale Integr. Syst., 2010)

A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs. - Daisaburo Takashima; Hidehiro Shiga; Daisuke Hashimoto; Tadashi Miyakawa; Shinichiro Shiratake; Katsuhiko Hoya; Ryu Ogiwara; Ryosuke Takizawa; Ryosuke Doumae; Ryo Fukuda; Yohji Watanabe; Shuso Fujii; et al. (IEEE J. Solid State Circuits, 2011)

Highly Reliable Reference Bitline Bias Designs for 64 Mb and 128 Mb Chain FeRAMs. - Ryu Ogiwara; Daisaburo Takashima; Sumiko M. Doumae; Shinichiro Shiratake; Ryosuke Takizawa; Hidehiro Shiga (IEEE J. Solid State Circuits, 2015)