Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM. - Akifumi Kawahara; Ken Kawai; Yuuichirou Ikeda; Yoshikazu Katoh; Ryotaro Azuma; Yuhei Yoshimoto; Kouhei Tanabe; Zhiqiang Wei 005; Takeki Ninomiya; Koji Katayama; Ryutaro Yasuhara; Shunsaku Muraoka; et al. (ISSCC, 2013)

Highly-reliable TaOx reram technology using automatic forming circuit. - Ken Kawai; Akifumi Kawahara; Ryutaro Yasuhara; Shunsaku Muraoka; Zhiqiang Wei 005; Ryotaro Azuma; Kouhei Tanabe; Kazuhiko Shimakawa (ICICDT, 2014)

Quantitative method for estimating characteristics of conductive filament in ReRAM. - Zhiqiang Wei 005; Ryutaro Yasuhara; Koji Katayama; Takumi Mikawa; Takeki Ninomiya; Shunsaku Muraoka (ISCAS, 2014)

A new prediction method for ReRAM data retention statistics based on 3D filament structures. - Zhiqiang Wei 005; Koji Katayama; Shunsaku Muraoka; Ryutaro Yasuhara; Takumi Mikawa; Koji Eriguchi (IRPS, 2015)

Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application. - Yukio Hayakawa; Atsushi Himeno; Ryutaro Yasuhara; W. Boullart; E. Vecchio; T. Vandeweyer; T. Witters; D. Crotti; M. Jurczak; S. Fujii; S. Ito; Y. Kawashima; et al. (VLSIC, 2015)

Study of error repeatability and recovery in 40nm TaOx ReRAM. - Takashi Inose; Seiichi Aritome; Ryutaro Yasuhara; Satoshi Mishima; Ken Takeuchi (ESSDERC, 2017)

Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-based ReRAM. - Kazuki Maeda; Shinpei Matsuda; Ken Takeuchi; Ryutaro Yasuhara (ESSDERC, 2018)

Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM. - Shouhei Fukuyama; Kazuki Maeda; Shinpei Matsuda; Ken Takeuchi; Ryutaro Yasuhara (IRPS, 2018)

Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. - Shouhei Fukuyama; Shinpei Matsuda; Ryutaro Yasuhara; Ken Takeuchi (NVMTS, 2018)

Comprehensive Analysis of Data-Retention and Endurance Trade-Off of 40nm TaOx-based ReRAM. - Shouhei Fukuyama; Atsuna Hayakawa; Ryutaro Yasuhara; Shinpei Matsuda; Hiroshi Kinoshita; Ken Takeuchi (IRPS, 2019)

Reliability Issues in Analog ReRAM Based Neural-Network Processor. - Ryutaro Yasuhara; Takashi Ono; Reiji Mochida; Shunsaku Muraoka; Kazuyuki Kouno; Koji Katayama; Yuriko Hayata; Masayoshi Nakayama; Hitoshi Suwa; Yukio Hayakawa; Takumi Mikawa; Yasushi Gohou; et al. (IRPS, 2019)

TaOx ReRAM as a Highly-Reliable Embedded Memory and Its Application to Edge AI. - Ryutaro Yasuhara (VLSI-DAT, 2020)