Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions. - N. A. Poklonski; N. I. Gorbachuk; S. V. Shpakovski; V. A. Filipenia; S. B. Lastovskii; V. A. Skuratov; Andreas D. Wieck; V. P. Markevich (Microelectron. Reliab., 2010)