Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development. - S. Beckx; M. Demand; S. Locorotondo; K. Henson; M. Claes; V. Paraschiv; D. Shamiryan; P. Jaenen; W. Boullart; S. Degendt (Microelectron. Reliab., 2005)