MIM capacitance variation under electrical stress. - C. Besset; S. Bruyère; S. Blonkowski; S. Crémer; E. Vincent (Microelectron. Reliab., 2003)

Electrical characterisation and reliability of HfO2 and Al2O3-HfO2 MIM capacitors. - F. Mondon; S. Blonkowski (Microelectron. Reliab., 2003)

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy. - R. Foissac; S. Blonkowski; M. Kogelschatz; P. Delcroix; M. Gros-Jean; F. Bassani (Microelectron. Reliab., 2013)

Frequency dependant gate oxide TDDB model. - M. Arabi; X. Federspiel; Florian Cacho; M. Rafik; S. Blonkowski; Xavier Garros; G. Guibaudo (IRPS, 2022)