Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric. - K.-H. Allers; Josef Böck; S. Boguth; K. Goller; Herbert Knapp; Rudolf Lachner (Microelectron. Reliab., 2009)

Integration of SiGe HBT with fT=305GHz, fmax=537GHz in 130nm and 90nm CMOS. - Dirk Manger; Wolfgang Liebl; S. Boguth; B. Binder; Klaus Aufinger; C. Dahl; C. Hengst; A. Pribil; J. Oestreich; S. Rohmfeld; S. Rothenhaeusser; D. Tschumakow; et al. (BCICTS, 2018)