Failures in ultrathin oxides: Stored energy or carrier energy driven? - S. Bruyère; Frederic Monsieur; David Roy 001; E. Vincent; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Gate oxide Reliability assessment optimization. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2002)

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. - David Roy 001; S. Bruyère; E. Vincent; Frederic Monsieur (Microelectron. Reliab., 2002)

MIM capacitance variation under electrical stress. - C. Besset; S. Bruyère; S. Blonkowski; S. Crémer; E. Vincent (Microelectron. Reliab., 2003)

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. - Frederic Monsieur; E. Vincent; Vincent Huard; S. Bruyère; David Roy 001; Thomas Skotnicki; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2003)

New insights into the change of voltage acceleration and temperature activation of oxide breakdown. - G. Ribes; S. Bruyère; Frederic Monsieur; David Roy 001; Vincent Huard (Microelectron. Reliab., 2003)

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. - G. Ribes; S. Bruyère; Mickael Denais; Frederic Monsieur; Vincent Huard; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. - G. Ribes; S. Bruyère; Mickael Denais; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)