S. Couet
Orcid: 0000-0001-6436-9593
According to our database1,
S. Couet
authored at least 22 papers
between 2018 and 2024.
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Bibliography
2024
2023
Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs.
Proceedings of the IEEE International Test Conference, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Memory Workshop, 2023
NPN Si/SiGe memory selector with non-linearity>10<sup>5</sup> and ON-current>6MA/cm<sup>2</sup>.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023
STT-MRAM Stochastic and Defects-aware DTCO for Last Level Cache at Advanced Process Nodes.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023
Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2023
Proceedings of the 32nd IEEE Asian Test Symposium, 2023
2022
Selective operations of multi-pillar SOT-MRAM for high density and low power embedded memories.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application.
Proceedings of the IEEE International Memory Workshop, 2021
2020
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
Proceedings of the 24th IEEE European Test Symposium, 2019
2018
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.
Proceedings of the IEEE International Reliability Physics Symposium, 2018