Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. - R. Khlil; A. El Hdiy; A. F. Shulekin; S. E. Tyaginov; M. I. Vexler (Microelectron. Reliab., 2004)

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. - M. I. Vexler; A. El Hdiy; D. Grgec; S. E. Tyaginov; R. Khlil; Bernd Meinerzhagen; A. F. Shulekin; I. V. Grekhov (Microelectron. J., 2006)

The post-damage behavior of a MOS tunnel emitter transistor. - S. E. Tyaginov; M. I. Vexler; A. F. Shulekin; I. V. Grekhov (Microelectron. Reliab., 2006)

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. - I. V. Grekhov; G. G. Kareva; S. E. Tyaginov; M. I. Vexler (Microelectron. Reliab., 2007)