Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. - W. B. Chen; Jing-Ping Xu; Pui-To Lai; Y. P. Li; S. G. Xu (Microelectron. Reliab., 2007)

A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects. - Jing-Ping Xu; Y. P. Li; Pui-To Lai; W. B. Chen; S. G. Xu; J. G. Guan (Microelectron. Reliab., 2008)