Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -. - Jung-Won Han; S. H. Park; Moonyoung Jeong; K. N. Kim; H. J. Kim; J. C. Shin; S. M. Park; S. H. Shin; S. W. Park; K. S. Lee; J. H. Lee; S. H. Kim; et al. (VLSI Technology and Circuits, 2023)

Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling. - J.-H. Yoo; H.-B. Jo; I.-G. Lee; S.-M. Choi; J.-M. Baek; S. T. Lee; H. Jang; M. W. Kong; H. H. Kim; H. J. Lee; H.-J. Kim; H.-S. Jeong; et al. (VLSI Technology and Circuits, 2023)