Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. - Dionyz Pogany; Ján Kuzmík; J. Darmo; Martin Litzenberger; Sergey Bychikhin; Karl Unterrainer; Z. Mozolova; S. Hascik; Tibor Lalinsky; Erich Gornik (Microelectron. Reliab., 2002)

Micromechanical Thermal Converter Device Based On Polyimide-Fixed Island Structure. - Tibor Lalinsky; M. Krnac; S. Hascik; Z. Mozolova; L. Matay; I. Kostic; P. Hrkut; Jiri Jakovenko; Miroslav Husák (Int. J. Comput. Eng. Sci., 2003)

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. - Andreas Graff; Michél Simon-Najasek; Frank Altmann; Ján Kuzmík; Dagmar Gregusová; S. Hascik; Helmut Jung; T. Baur; Jan Grünenpütt; Hervé Blanck (Microelectron. Reliab., 2017)