Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. - Marc Porti; S. Meli; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2003)

Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. - Marc Porti; S. Meli; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2004)