A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies. - Florian Cacho; S. Orain; G. Cailletaud; H. Jaouen (Microelectron. Reliab., 2007)

FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding. - S. Orain; J.-C. Barbé; X. Federspiel; P. Legallo; H. Jaouen (Microelectron. Reliab., 2007)