4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory. - Wei-Chen Chen; F. Huang; S. Qin; Z. Yu; Q. Lin; Paul C. McIntyre; Simon S. Wong; H.-S. Philip Wong (VLSI Technology and Circuits, 2022)

First Observation of Ultra-high Polarization ( 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes. - F. Huang; B. Saini; L. Wan; H. Lu; X. He; S. Qin; Wilman Tsai; A. Gruverman; Andrew C. Meng; H.-S. Philip Wong; Paul C. McIntyre; Simon S. Wong (VLSI Technology and Circuits, 2023)