Modelling of a nonlinear distributed parameter bioreactor via Orthogonal Collocation method. - S. Rachidi; A. Karama; R. Channa (ICMCS, 2014)

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. - Laurent Breuil; L. Nyns; S. Rachidi; K. Banerjee; Antonio Arreghini; J. P. Bastos; S. Ramesh; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. - S. Rachidi; Antonio Arreghini; Devin Verreck; G. L. Donadio; K. Banerjee; K. Katcko; Yusuke Oniki; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

Enabling 3D NAND Trench Cells for Scaled Flash Memories. - S. Rachidi; S. Ramesh; Laurent Breuil; Z. Tao; Devin Verreck; G. L. Donadio; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2023)

Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. - S. Rachidi; S. Ramesh; Davide Tierno; G. L. Donadio; A. Pacco; J. W. Maes; Y. Jeong; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2024)

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. - Yusuke Higashi; J. P. Bastos; Adrian Vaisman Chasin; Laurent Breuil; Antonio Arreghini; S. Ramesh; S. Rachidi; Y. Jeong; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Hole-Side Airgap Integration as Enabler for 3D NAND Flash Z-Pitch Scaling. - S. Rachidi; S. Ramesh; Devin Verreck; J. Loyo; Y. Jeong; H. Puliyalil; Jie Li; F. Seidel; Geert Van Den Bosch; Maarten Rosmeulen (IMW, 2025)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)