Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. - W. S. Lau; P. W. Qian; Taejoon Han; Nathan P. Sandler; S. T. Che; S. E. Ang; C. H. Tung; T. T. Sheng (Microelectron. Reliab., 2007)