Comparison of RF performance between 20 nm-gate bulk and SOI FinFET. - Sabina Krivec; H. Prgic; Mirko Poljak; Tomislav Suligoj (MIPRO, 2014)

Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices. - Sabina Krivec; Mirko Poljak; Tomislav Suligoj (MIPRO, 2015)

Band-structure of ultra-thin InGaAs channels: Impact of biaxial strain and thickness scaling. - Sabina Krivec; Mirko Poljak; Tomislav Suligoj (MIPRO, 2017)