Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. - Pieter Cardinael; Sachin Yadav 001; Ming Zhao; Martin Rack; Dimitri Lederer; Nadine Collaert; Bertrand Parvais; Jean-Pierre Raskin (ESSDERC, 2021)

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. - Sachin Yadav 001; Pieter Cardinael; Ming Zhao; Komal Vondkar; Uthayasankaran Peralagu; AliReza Alian; Ahmad Khaled; Sergej Makovejev; Enrique Ekoga; Dimitri Lederer; Jean-Pierre Raskin; Bertrand Parvais; et al. (ICICDT, 2021)

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. - AliReza Alian; Raúl Rodríguez; Sachin Yadav 001; Uthayasankaran Peralagu; Arturo Sibaja Hernandez; Vamsi Putcha; Ming Zhao; Rana Y. El Kashlan; Bjorn Vermeersch; Hao Yu; Erik Bury; Ahmad Khaled; et al. (ESSDERC, 2022)

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. - Abhitosh Vais; Sachin Yadav 001; Yves Mols; Bjorn Vermeersch; Komal Vondkar Kodandarama; Marina Baryshnikova; G. Mannaert; R. Alcotte; Geert Boccardi; Piet Wambacq; Bertrand Parvais; R. Langer; et al. (ESSDERC, 2022)

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. - Vamsi Putcha; Hao Yu; Jacopo Franco; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; Nadine Collaert (IRPS, 2022)

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. - Rana Y. El Kashlan; Hao Yu; Ahmad Khaled; Sachin Yadav 001; Uthayasankaran Peralagu; AliReza Alian; Nadine Collaert; Piet Wambacq; Bertrand Parvais (ESSDERC, 2023)

DC Reliability Study of $ text{high}- kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. - Barry J. O'Sullivan; AliReza Alian; Arturo Sibaja Hernandez; Jacopo Franco; Sachin Yadav 001; Hao Yu; Aarti Rathi; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2024)

Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. - Amratansh Gupta; Hao Yu; Sachin Yadav 001; AliReza Alian; Uthavasankaran Peralagu; E.-San Jang; Ying-Chun Kuo; Nadine Collaert; Bertrand Parvais (IRPS, 2025)

Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. - Aarti Rathi; Barry J. O'Sullivan; R. ElKashlan; B. Kazemi Esfeh; Arturo Sibaja Hernandez; Hao Yu; AliReza Alian; Sachin Yadav 001; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2025)

Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. - Yi Yang; Hao Yu; Meng-Che Tsai; Wei-Tung Lin; Ying-Chun Kuo; Barry J. O'Sullivan; Aarti Rathi; Amratansh Gupta; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; et al. (IRPS, 2025)

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. - Hao Yu; R. ElKashlan; Meng-Che Tsai; Yi Yang; Mamoun Guenach; Ying-Chun Kuo; Sachin Yadav 001; Barry J. O'Sullivan; Aarti Rathi; Amratansh Gupta; D. Xiao; Claude Desset; et al. (IRPS, 2025)